Layer Number-Dependent Raman Spectra of ?-InSe

被引：16

作者：

Sun, Yu-Jia ^{[1
,2
]}

Pang, Si-Min ^{[1
,2
]}

Zhang, Jun ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100049, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2022年 / 13卷 / 16期

基金：

国家重点研发计划;

关键词：

HIGH-PERFORMANCE; INDIUM SELENIDE; SCATTERING; SHEAR; MULTILAYER; MONOLAYER; MODES;

D O I：

10.1021/acs.jpclett.2c00504

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The two-dimensional layered semiconductor InSe, with its high carrier mobility,chemical stability, and strong charge transfer ability, plays a crucial role in optoelectronic devices.The number of InSe layers (L) has an important influence on its band structure andoptoelectronic properties. Herein we present systematic investigations on few-layer (1L-7L)gamma-InSe by optical contrast and Raman spectroscopy. We propose three quantified formulas to quicklyidentify the layer number using optical contrast, the frequency difference of two A1modes, andultralow-frequency Raman spectroscopy, respectively. Moreover, angle-resolved polarizationRaman spectra show that gamma-InSe is isotropic in thea-bplane. Furthermore, using Ramanmapping, wefind that the relative strength of the low-frequency interlayer shear modes isparticularly sensitive to the interaction between the sample and the substrate.

引用

页码：3691 / 3697

页数：7

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