Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 °C by rf-PECVD

被引：23

作者：

Labrune, M. ^{[1
,2
]}

Moreno, M. ^{[1
]}

Roca i Cabarrocas, P. ^{[1
]}

机构：

[1] Ecole Polytech, CNRS, Phys Interfaces & Couches Minces Lab, F-91128 Palaiseau, France

[2] TOTAL SA, Gas & Power R&D Div, Courbevoie, France

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 09期

关键词：

PECVD; Silicon; Epitaxy; Shallow junction; POLYMORPHOUS SILICON; DEPOSITION;

D O I：

10.1016/j.tsf.2009.09.143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we use in-situ and ex-situ spectroscopic ellipsometry as an optical tool to optimize the process conditions that lead to epitaxial growth of undoped and doped silicon films in a standard radio-frequency Plasma Enhanced Chemical Vapor Deposition (rf-PECVD) reactor at temperatures below 200 degrees C. The influence of the plasma conditions (such as pressure, inter-electrode distance, hydrogen dilution and dopant precursor gas concentration) on the nature of the films IS Studied This optimization allows us to achieve epitaxial growth of phosphorous-doped and boron-doped silicon films at temperatures as low is 175 degrees C and 140 degrees C, respectively. The epitaxial films possess thicknesses on the order of a few tens of nanometers, and sheet resistance values below 150 Omega/square Annealing in air at 275 degrees C helps to further improve the conductivity of boron-doped layers Four-point probe sheet resistance measurements and secondary ion mass spectrometry profiles are used to assess the dopant profile in the epitaxial layers The junctions thus obtained are also characterized through their application in a solar cell, resulting in a fill factor over 76% and an efficiency exceeding 14%. (c) 2009 Elsevier B.V. All rights reserved

引用

页码：2528 / 2530

页数：3