Electrostatic discharge in semiconductor devices: An overview

被引：88

作者：

Vinson, JE ^{[1
]}

Liou, JJ

机构：

[1] Harris Corp, Semicond, Reliabil Engn Dept, Melbourne, FL 32902 USA

[2] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA

来源：

PROCEEDINGS OF THE IEEE | 1998年 / 86卷 / 02期

关键词：

electrical overstress; electrostatic discharge; empirical models; failure mechanisms; semiconductor devices;

D O I：

10.1109/5.659493

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrostatic discharge (ESD) is an event that sends current through an integrated circuit (IC). This paper reviews the impact of ESD on the IC industry and details the four stages of an ESD event: 1) charge generation, 2) charge transfer, 3) device response, and 4) device failure. Topics reviewed are charge generation mechanisms, models for ESD charge transfer electrical conduction mechanisms, and device damage mechanisms leading to circuit failure.

引用

页码：399 / 418

页数：20

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