Impact of substrate nitridation on the growth of InN on In2O3(111) by plasma-assisted molecular beam epitaxy

被引：6

作者：

Cho, Yongjin ^{[1
,3
]}

Sadofev, Sergey ^{[1
]}

Fernandez-Garrido, Sergio ^{[1
]}

Calarco, Raffaella ^{[1
]}

Riechert, Henning ^{[1
]}

Qalazka, Zbigniew ^{[2
]}

Uecker, Reinhard ^{[2
]}

Brandt, Oliver ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

[2] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany

[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

APPLIED SURFACE SCIENCE | 2016年 / 369卷

关键词：

InN; In2O3; MBE; Nitridation; Polarity; SAPPHIRE NITRIDATION; GAN GROWTH; SINGLE-CRYSTALS; TEMPERATURE; LAYERS; CHEMISTRY; FILMS;

D O I：

10.1016/j.apsusc.2016.01.268

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We study the growth of InN films on In2O3(111) substrates by plasma-assisted molecular beam epitaxy under N excess. InN films deposited directly on In2O3(111) exhibit a strongly faceted morphology. A nitridation step prior to growth is found to convert the In2O3(111) surface to InN{0001}. The morphology of InN films deposited on such nitridated In2O3(111) substrates is characteristic for growth by instable step flow and is thus drastically different from the three-dimensional growth obtained without nitridation. We show that this change originates from the different polarity of the films: while InN films deposited directly on In2O3(111) are In-polar, they are N-polar when grown on the nitridated substrate. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：159 / 162

页数：4

共 20 条

[1] Step-flow growth mode instability of N-polar GaN under N-excess [J].

Cheze, C. ;

Sawicka, M. ;

Siekacz, M. ;

Turski, H. ;

Cywinski, G. ;

Smalc-Koziorowska, J. ;

Weyher, J. L. ;

Krysko, M. ;

Lucznik, B. ;

Bockowski, M. ;

Skierbiszewski, C. .

APPLIED PHYSICS LETTERS, 2013, 103 (07)

[2] Structural properties of InN films grown on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy [J].

Cho, YongJin ;

Brandt, Oliver ;

Korytov, Maxim ;

Albrecht, Martin ;

Kaganer, Vladimir M. ;

Ramsteiner, Manfred ;

Riechert, Henning .

APPLIED PHYSICS LETTERS, 2012, 100 (15)

[3] X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism [J].

Dwikusuma, F ;

Kuech, TF .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) :5656-5664

[4] Melt growth, characterization and properties of bulk In2O3 single crystals [J].

Galazka, Z. ;

Uecker, R. ;

Irmscher, K. ;

Schulz, D. ;

Klimm, D. ;

Albrecht, M. ;

Pietsch, M. ;

Ganschow, S. ;

Kwasniewski, A. ;

Fornari, R. .

JOURNAL OF CRYSTAL GROWTH, 2013, 362 :349-352

[5] A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method [J].

Galazka, Zbigniew ;

Uecker, Reinhard ;

Fornari, Roberto .

JOURNAL OF CRYSTAL GROWTH, 2014, 388 :61-69

[6] Effect of heat treatment on properties of melt-grown bulk In2O3 single crystals [J].

Galazka, Zbigniew ;

Irmscher, Klaus ;

Pietsch, Mike ;

Schulz, Tobias ;

Uecker, Reinhard ;

Klimm, Detlef ;

Fornari, Roberto .

CRYSTENGCOMM, 2013, 15 (12) :2220-2226

[7] Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers [J].

Grandjean, N ;

Massies, J ;

Leroux, M .

APPLIED PHYSICS LETTERS, 1996, 69 (14) :2071-2073

[8] Changes in the growth mode of low temperature GaN buffer layers with nitrogen plasma nitridation of sapphire substrates [J].

Kim, MH ;

Sone, C ;

Yi, JH ;

Yoon, E .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1228-1230

[9] Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy [J].

Koblmuller, G. ;

Gallinat, C. S. ;

Bernardis, S. ;

Speck, J. S. ;

Chern, G. D. ;

Readinger, E. D. ;

Shen, H. ;

Wraback, M. .

APPLIED PHYSICS LETTERS, 2006, 89 (07)

[10] Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001) [J].

Lee, CD ;

Sagar, A ;

Feenstra, RM ;

Inoki, CK ;

Kuan, TS ;

Sarney, WL ;

Salamanca-Riba, L .

APPLIED PHYSICS LETTERS, 2001, 79 (21) :3428-3430

← 1 2 →