Effect of temperature on the current (capacitance and conductance)-voltage characteristics of Ti/n-GaAs diode

被引：24

作者：

Ejderha, K. ^{[1
]}

Duman, S. ^{[2
]}

Nuhoglu, C. ^{[3
]}

Urhan, F. ^{[2
]}

Turut, A. ^{[4
]}

机构：

[1] Bingol Univ, Dept Elect & Energy, Vocat High Sch Tech Sci, TR-12000 Bingol, Turkey

[2] Ataturk Univ, Dept Phys, Fac Sci, TR-25240 Erzurum, Turkey

[3] Yildiz Tech Univ, Dept Phys, Fac Sci, TR-34220 Istanbul, Turkey

[4] Istanbul Medeniyet Univ, Dept Engn Phys, Fac Sci, TR-34700 Istanbul, Turkey

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 23期

关键词：

CURRENT-VOLTAGE CHARACTERISTICS; BARRIER HEIGHT DISTRIBUTION; SCHOTTKY BARRIERS; CAPACITANCE-VOLTAGE; ELECTRON-TRANSPORT; SERIES RESISTANCE; SI; PARAMETERS; INHOMOGENEITY; COEFFICIENT;

D O I：

10.1063/1.4904918

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current-voltage, capacitance-voltage, and conductance-voltage characteristics of Ti/n-GaAs diode have been investigated in the temperature range of 80-320 K. The ideality factor and barrier height values have been calculated from the forward current-voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance-voltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (alpha = -0.65 meV K-1). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity. (C) 2014 AIP Publishing LLC.

引用

页数：6

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