Growth of p-type zinc oxide films by chemical vapor deposition

被引：522

作者：

Minegishi, K

Koiwai, Y

Kikuchi, Y

Yano, K

Kasuga, M

Shimizu, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 11A期

关键词：

p-type ZnO; nitrogen doping; hydrogen passivation;

D O I：

10.1143/JJAP.36.L1453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of p-type ZnO film was realized for the first time by the simultaneous addition of NH3 in carrier hydrogen and excess Zn in source ZnO powder. The resistivity was typically 100 Omega.cm. A model showing nitrogen incorporation suggests the possibility of realizing p-type ZnO film of low resistivity by optimizing thermal annealing.

引用

页码：L1453 / L1455

页数：3

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