High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

被引：110

作者：

Joung, Daeha ^{[1
,2
]}

Chunder, A. ^{[1
,3
]}

Zhai, Lei ^{[1
,3
]}

Khondaker, Saiful I. ^{[1
,2
]}

机构：

[1] Univ Cent Florida, Nanosci Technol Ctr, Orlando, FL 32826 USA

[2] Univ Cent Florida, Dept Phys, Orlando, FL 32826 USA

[3] Univ Cent Florida, Dept Chem, Orlando, FL 32826 USA

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 16期

基金：

美国国家科学基金会;

关键词：

LARGE-AREA; ELECTRICAL-CONDUCTIVITY; GRAPHITE OXIDE; FILMS; TRANSPARENT; REDUCTION; SHEETS; ROUTE;

D O I：

10.1088/0957-4484/21/16/165202

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembled between prefabricated gold source and drain electrodes using ac dielectrophoresis. With the application of a backgate voltage, 60% of the devices showed p-type FET behavior, while the remaining 40% showed ambipolar behavior. After mild thermal annealing at 200 degrees C, all ambipolar RGO FET remained ambipolar with increased hole and electron mobility, while 60% of the p-type RGO devices were transformed to ambipolar. The maximum hole and electron mobilities of the devices were 4.0 and 1.5 cm(2) V-1 s(-1) respectively. High yield assembly of chemically derived RGO FET will have significant impact in scaled up fabrication of graphene based nanoelectronic devices.

引用

页数：5

共 28 条

[1] Evaluation of solution-processed reduced graphene oxide films as transparent conductors [J].