Room-temperature external cavity GaSb-based diode laser around 2.13 μm

被引：8

作者：

Jacobs, UH

Scholle, K

Heumann, E

Huber, G

Rattunde, M

Wagner, J

机构：

[1] Univ Hamburg, Inst Laser Phys, D-22761 Hamburg, Germany

[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 24期

关键词：

D O I：

10.1063/1.1833561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a grating-tuned room-temperature (AlGaIn)(AsSb) diode laser oscillating on a single external cavity mode in the wavelength region around 2.13 mum. A total tuning range of 43 nm with an optical output power of up to 14.7 mW was achieved with a linewidth less than 3.85 MHz. (C) 2004 American Institute of Physics.

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收藏

页码：5825 / 5826

页数：2

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