Investigation on structural, electrical and optical properties of tungsten-doped tin oxide thin films

被引：66

作者：

Huang, Yanwei ^{[1
]}

Li, Guifeng ^{[1
]}

Feng, Jiahan ^{[1
]}

Zhang, Qun ^{[1
]}

机构：

[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Transparent conductive oxide (TCO); Tungsten-doped tin oxide; Thin films; Electrical and optical properties; THERMAL COLORATION; SNO2; ALPHA-AL2O3(0001); OXIDATION; STATES; PURE;

D O I：

10.1016/j.tsf.2009.07.119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tungsten-doped tin oxide (SnO2:W) transparent conductive films were prepared on quartz substrates by pulsed plasma deposition method with a post-annealing. The structure, chemical states, electrical and optical properties of the films have been investigated with tungsten-doping content and annealing temperature. The lowest resistivity of 6.67 x 10(-4) Omega cm was obtained, with carrier mobility of 65 cm(2) V-1 s(-1) and carrier concentration of 1.44 x 10(20) cm(-3) in 3 wt.% tungsten-doping films annealed at 800 degrees C in air. The average optical transmittance achieves 86% in the visible region, and approximately 85% in near-infrared region, with the optical hand gap ranging from 4.05 eV to 4.22 eV. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1892 / 1896

页数：5

共 28 条

[1] Characterization of transparent conducting oxides [J].

Coutts, TJ ;

Young, DL ;

Li, XN .

MRS BULLETIN, 2000, 25 (08) :58-65

[2] Effect of Sn concentration on structural and optical properties of zinc oxide nanobelts [J].

Deng, R. ;

Zhang, X. T. .

JOURNAL OF LUMINESCENCE, 2008, 128 (09) :1442-1446

[3] A study on low cost-high conducting fluorine and antimony-doped tin oxide thin films [J].

Elangovan, E ;

Ramamurthi, K .

APPLIED SURFACE SCIENCE, 2005, 249 (1-4) :183-196

[4] Preparation and characterization of single crystalline SnO2 films deposited on α-Al2O3 (0001) by MOCVD [J].

Feng, Xianjin ;

Ma, Jin ;

Yang, Fan ;

Ji, Feng ;

Luan, Caina .

MATERIALS LETTERS, 2008, 62 (12-13) :1809-1811

[5] Transparent conducting SnO2:Sb epitaxial films prepared on α-Al2O3 (0001) by MOCVD [J].

Feng, Xianjin ;

Ma, Jin ;

Yang, Fan ;

Ji, Feng ;

Zong, Fujian ;

Luan, Caina ;

Ma, Honglei .

MATERIALS LETTERS, 2008, 62 (12-13) :1779-1781

[6] Drude's model calculation rule on electrical transport in Sb-doped SnO2 thin films, deposited via sol-gel [J].

Geraldo, Viviany ;

Scalvi, Luis V. A. ;

Lisboa-Filho, P. N. ;

Morilla-Santos, C. .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2006, 67 (07) :1410-1415

[7] EVAPORATED SN-DOPED IN2O3 FILMS - BASIC OPTICAL-PROPERTIES AND APPLICATIONS TO ENERGY-EFFICIENT WINDOWS [J].

HAMBERG, I ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :R123-R159

[8] Properties of transparent conductive In2O3:Mo thin films deposited by Channel Spark Ablation [J].

Huang, L ;

Li, XF ;

Zhang, Q ;

Miao, WN ;

Zhang, L ;

Yan, XJ ;

Zhang, ZJ ;

Hua, ZY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (05) :1350-1353

[9] Tungsten-doped tin oxide thin films prepared by pulsed plasma deposition [J].

Huang, Yanwei ;

Zhang, Qun ;

Li, Guifeng ;

Yang, Ming .

MATERIALS CHARACTERIZATION, 2009, 60 (05) :415-419

[10] Transparent conducting F-doped SnO2 thin films grown by pulsed laser deposition [J].

Kim, H. ;

Auyeung, R. C. Y. ;

Pique, A. .

THIN SOLID FILMS, 2008, 516 (15) :5052-5056

← 1 2 3 →