Comparative mid- and far-infrared spectroscopy of nitrogen-oxygen complexes in silicon

被引：3

作者：

Alt, H. Ch. ^{[1
]}

Wagner, H. E. ^{[1
]}

机构：

[1] Munich Univ Appl Sci, Dept Engn Phys, D-80335 Munich, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 23-24期

关键词：

Czochralski silicon; Nitrogen oxygen complexes; Shallow donors; Infrared spectroscopy; ABSORPTION PEAKS; CZ SILICON; DEFECTS; DONORS;

D O I：

10.1016/j.physb.2009.08.104

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A comparative infrared absorption study between electronic and vibrational states of nitrogen-oxygen related shallow donors has been performed in nitrogen-doped Czochralski silicon. Quasi-thermodynamic equilibrium conditions have been established by long-term annealing between 600 and 1000 degrees C. Different members of the N-O shallow donor family show a specific thermal decay in this temperature range, in disagreement with present theoretical modeling. Based on this characteristic behavior, we find two local vibrational modes at 1070 and 860 cm(-1) which can be assigned to the most prominent shallow-donor species with the chemical composition NO(2). The implication on the microscopic structure of this complex is discussed. (C) 2009 Elsevier By. All rights reserved.

引用

页码：4549 / 4551

页数：3

共 15 条

[1]

ABE T, 1981, SEMICONDUCTOR SILICO, P54

[2] Far-infrared absorption due to electronic transitions of N-O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration [J].

Alt, HC ;

Gomeniuk, YV ;

Bittersberger, F ;

Kempf, A ;

Zemke, D .

APPLIED PHYSICS LETTERS, 2005, 87 (15) :1-3

[3] Nitrogen related shallow thermal donors in silicon [J].

Fujita, N. ;

Jones, R. ;

Oeberg, S. ;

Briddon, P. R. .

APPLIED PHYSICS LETTERS, 2007, 91 (05)

[4] First-principles study on the local vibrational modes of nitrogen-oxygen defects in silicon [J].

Fujita, N. ;

Jones, R. ;

Oberg, S. ;

Briddon, P. R. .

PHYSICA B-CONDENSED MATTER, 2007, 401 (159-162) :159-162

[5] Theoretical studies on nitrogen-oxygen complexes in silicon [J].

Gali, A ;

Miro, J ;

Deak, P ;

Ewels, CP ;

Jones, R .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (41) :7711-7722

[6] Infrared absorption peaks in nitrogen doped CZ silicon [J].

Inoue, N. ;

Nakatsu, M. ;

Ono, H. ;

Inoue, Y. .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 134 (2-3) :202-206

[7] Annealing behavior of new nitrogen infrared absorption peaks in CZ silicon [J].

Inoue, N ;

Nakatsu, M ;

Tanahashi, K ;

Yamada-Kaneta, H ;

Ono, H ;

Akhmetov, VD ;

Lysytskiy, O ;

Richter, H .

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 2005, 108-109 :609-613

[8] THEORETICAL AND ISOTOPIC INFRARED-ABSORPTION INVESTIGATIONS OF NITROGEN-OXYGEN DEFECTS IN SILICON [J].

JONES, R ;

EWELS, C ;

GOSS, J ;

MIRO, J ;

DEAK, P ;

OBERG, S ;

RASMUSSEN, FB .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (11) :2145-2148

[9] NEW OXYGEN RELATED SHALLOW THERMAL DONOR CENTERS IN CZOCHRALSKI-GROWN SILICON [J].

NAVARRO, H ;

GRIFFIN, J ;

WEBER, J ;

GENZEL, L .

SOLID STATE COMMUNICATIONS, 1986, 58 (03) :151-155

[10] VIBRATIONAL ABSORPTION-BANDS FOR IMPLANTED NITROGEN IN CRYSTALLINE SILICON [J].

STEIN, HJ .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :296-298

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