Charge Carrier Separation in Solar Cells

被引:335
作者
Wuerfel, Uli [1 ,2 ]
Cuevas, Andres [3 ]
Wuerfel, Peter [4 ]
机构
[1] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany
[2] Univ Freiburg, Mat Res Ctr, D-79104 Freiburg, Germany
[3] Australian Natl Univ, Res Sch Engn, Canberra, ACT 0200, Australia
[4] Karlsruhe Inst Technol, D-76131 Karlsruhe, Germany
来源
IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 01期
关键词
Charge carriers; photovoltaic cells; radiative recombination; semiconductor device doping; semiconductor device modeling; semiconductor-metal interfaces; EFFICIENCY; TRANSPORT; JUNCTION; CONTACT; LIMIT;
D O I
10.1109/JPHOTOV.2014.2363550
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The selective transport of electrons and holes to the two terminals of a solar cell is often attributed to an electric field, although well-known physics states that they are driven by gradients of quasi-Fermi energies. However, in an illuminated semiconductor, these forces are not selective, and they drive both charge carriers toward both contacts. This paper shows that the necessary selectivity is achieved by differences in the conductivities of electrons and holes in two distinct regions of the device, which, for one charge carrier, allows transport to one contact and block transport to the other contact. To clarify the physics, we perform numerical simulations of three different solar cell structures with asymmetric carrier conductivities. Two of them achieve the ideal conversion efficiency limit, despite the fact that the charge carriers flow against an internal electric field, proving that the latter cannot explain carrier separation. A third, i.e., conceptual structure, has no electric field at all but still works ideally as a solar cell. In conclusion, the different conductivities of electrons and holes in two regions of the device can be identified as the essential ingredient for charge carrier separation in solar cells, regardless of the existence of an electric field.
引用
收藏
页码:461 / 469
页数:9
相关论文
共 20 条
[1]  
[Anonymous], 2014, IEC STD 60904 3
[2]  
[Anonymous], 2014, ASTM STANDARD G173
[3]   Silicon heterojunction solar cell with passivated hole selective MoOx contact [J].
Battaglia, Corsin ;
de Nicolas, Silvia Martin ;
De Wolf, Stefaan ;
Yin, Xingtian ;
Zheng, Maxwell ;
Ballif, Christophe ;
Javey, Ali .
APPLIED PHYSICS LETTERS, 2014, 104 (11)
[4]   Hole Selective MoOx Contact for Silicon Solar Cells [J].
Battaglia, Corsin ;
Yin, Xingtian ;
Zheng, Maxwell ;
Sharp, Ian D. ;
Chen, Teresa ;
McDonnell, Stephen ;
Azcatl, Angelica ;
Carraro, Carlo ;
Ma, Biwu ;
Maboudian, Roya ;
Wallace, Robert M. ;
Javey, Ali .
NANO LETTERS, 2014, 14 (02) :967-971
[5]   High efficiency n-type Si solar cells on Al2O3-passivated boron emitters [J].
Benick, Jan ;
Hoex, Bram ;
van de Sanden, M. C. M. ;
Kessels, W. M. M. ;
Schultz, Oliver ;
Glunz, Stefan W. .
APPLIED PHYSICS LETTERS, 2008, 92 (25)
[6]   SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].
COWLEY, AM ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&
[7]   Misconceptions and Misnomers in Solar Cells [J].
Cuevas, Andres ;
Yan, Di .
IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (02) :916-923
[8]   Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics [J].
Feldmann, Frank ;
Bivour, Martin ;
Reichel, Christian ;
Hermle, Martin ;
Glunz, Stefan W. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 120 :270-274
[9]  
Green MA., 1995, Silicon Solar Cells
[10]   18.7% efficient laser-doped solar cell on p-type Czochralski silicon [J].
Hameiri, Z. ;
Mai, L. ;
Sproul, A. ;
Wenham, S. R. .
APPLIED PHYSICS LETTERS, 2010, 97 (22)