Retention characteristics of V-doped Bi3.25La0.75Ti3O12 thin film

被引:18
作者
Kim, JS
Ahn, CW
Lee, HJ
Lee, SY
Kim, IW
Bae, JS
Jeong, JH
机构
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[2] Pukyong Natl Univ, Dept Phys, Pusan 6089737, South Korea
关键词
films; ferroelectric properties; BLT; FRAM; retention;
D O I
10.1016/j.ceramint.2003.12.099
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Bi3.25La0.75TiO12 (BLT) and V-doped BLT (BLTV) thin films are prepared on Pt/Ti/SiO2/Si substrates by a pulsed laser deposition (PLD) method. Ferroelectric and polarization retention characteristics are investigated by leakage current density-electric field (J-E) and P-E hysteresis loops. The single phases with Bi-layered perovskite structure are confirmed by XRD. The increase of leakage current of BLT and BLTV films are produced at 100 kV/cm and 160 kV/cm, respectively. The long-time retention dispalys a stretched exponential decay for BLT film while a logarithmic decay for BLTV film. After a retention time of 1 x 10(5) s, the retention loss of BLT and BLTV films were about 14 and 7% of the initial value measured at t = 1 s, respectively. BLTV thin film exhibits a retention-free characteristics. The effect of vanadium doping on the retention properties of BLT film will be discussed in detail. (C) 2004 Published by Elsevier Ltd and Techna Group S.r.l.
引用
收藏
页码:1565 / 1568
页数:4
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