MoS2 field-effect transistor with graphene contacts

被引：16

作者：

Andleeb, Shaista ^{[1
,2
]}

Eom, Jonghwa ^{[1
,2
]}

Naz, Nabila Rauf ^{[3
]}

Singh, Arun Kumar ^{[1
,2
,4
,5
]}

机构：

[1] Sejong Univ, Dept Phys, Seoul 143747, South Korea

[2] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea

[3] Univ Bonn, Inst Anorgan Chem, Gerhard Domagh Str 1, D-53121 Bonn, Germany

[4] Dept Phys, Allahabad 211004, Uttar Pradesh, India

[5] Motilal Nehru Natl Inst Technol, Allahabad 211004, Uttar Pradesh, India

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2017年 / 5卷 / 32期

基金：

新加坡国家研究基金会;

关键词：

METAL; ELECTRODE; BEHAVIOR;

D O I：

10.1039/c7tc01736g

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tailoring the electronic properties of molybdenum disulfide (MoS2) is essential to obtain the best performance of its electronic and optoelectronic devices. Here, we report a simple methodology to improve the performance of bi-layer (BL) Mo-2 field-effect transistors (FETs) by a combination of nitrogen (N-2) gas and deep-ultraviolet (DUV) light treatment. Threshold voltages of BL MoS2 FETs shifted towards a negative gate voltage after treatment with N-2 gas in the presence of DUV light. The charge-carrier mobility of BL MoS2 was improved significantly after exposure to N-2 gas under DUV light irradiation. The carrier density of BL MoS2 was enhanced after treatment with N-2 gas in the presence of DUV light. We believe that our work may also help improve the performance of other two-dimensional nanomaterials.

引用

页码：8308 / 8314

页数：7

共 41 条

[1] Chemical doping of MoS2 multilayer by p-toluene sulfonic acid [J].