Atom probe tomography of nanostructures

被引:9
作者
Gnaser, Hubert [1 ,2 ,3 ]
机构
[1] Inst Oberflachen & Schichtanalyt IFOS, D-67663 Kaiserslautern, Germany
[2] Univ Kaiserslautern, Fachbereich Phys, D-67663 Kaiserslautern, Germany
[3] Univ Kaiserslautern, Forschungszentrum OPTIMAS, D-67663 Kaiserslautern, Germany
关键词
atom probe tomography; Fe; Cr; Fe multilayers; Si nanocrystals; GaN; LOCAL MAGNIFICATION; SILICON; RECONSTRUCTION; OVERLAPS;
D O I
10.1002/sia.5507
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atom probe tomography (APT) constitutes a rather unique analytical technique for the 3D elemental characterization of solid materials with potentially sub-nm spatial resolution. APT is, therefore, very well suited for the analysis of a nanostructured specimen such as matrix-embedded nanoparticles, ultra-thin films and junctions, grain boundaries, and others. This presentation will emphasize these capabilities, describing three methods of data mining that can be used to fully exploit APT: (i) Visualization of atomic lattice planes in crystalline specimens, (ii) the determination of iso-concentration surfaces and proximity histograms derived thereof, and (iii) a cluster identification algorithm based on maximum-atom separations. These approaches will be illustrated by means of different types of samples: a crystalline tungsten specimen, a Fe/Cr/Fe multilayer system, Si nanocrystals embedded in a silicon oxide matrix, and Mg clustering in GaN. The results demonstrate clearly that sub-nm-sized structures can be characterized by APT. Copyright (c) 2014 John Wiley & Sons, Ltd.
引用
收藏
页码:383 / 388
页数:6
相关论文
共 43 条
  • [1] Characterizing Atomic Composition and Dopant Distribution in Wide Band Gap Semiconductor Nanowires Using Laser-Assisted Atom Probe Tomography
    Agrawal, Ravi
    Bernal, Rodrigo A.
    Isheim, Dieter
    Espinosa, Horacio D.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (36) : 17688 - 17694
  • [2] Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice
    Bennett, S. E.
    Ulfig, R. M.
    Clifton, P. H.
    Kappers, M. J.
    Barnard, J. S.
    Humphreys, C. J.
    Oliver, R. A.
    [J]. ULTRAMICROSCOPY, 2011, 111 (03) : 207 - 211
  • [3] A model accounting for spatial overlaps in 3D atom-probe microscopy
    Blavette, D
    Vurpillot, F
    Pareige, P
    Menand, A
    [J]. ULTRAMICROSCOPY, 2001, 89 (1-3) : 145 - 153
  • [4] Interplay of energy dissipation, ion-induced mixing, and crystal structure recovery, and surface effects in ion-irradiated magnetic Fe/Cr/Fe trilayers
    Brodyanski, A.
    Blomeier, S.
    Gnaser, H.
    Bock, W.
    Hillebrands, B.
    Kopnarski, M.
    Reuscher, B.
    [J]. PHYSICAL REVIEW B, 2011, 84 (21)
  • [5] Gaining light from silicon
    Canham, L
    [J]. NATURE, 2000, 408 (6811) : 411 - 412
  • [6] Planar patterned magnetic media obtained by ion irradiation
    Chappert, C
    Bernas, H
    Ferré, J
    Kottler, V
    Jamet, JP
    Chen, Y
    Cambril, E
    Devolder, T
    Rousseaux, F
    Mathet, V
    Launois, H
    [J]. SCIENCE, 1998, 280 (5371) : 1919 - 1922
  • [7] Magnetic patterning by means of ion irradiation and implantation
    Fassbender, J.
    McCord, J.
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2008, 320 (3-4) : 579 - 596
  • [8] Advances in the reconstruction of atom probe tomography data
    Gault, B.
    Haley, D.
    de Geuser, F.
    Moody, M. P.
    Marquis, B. A.
    Larson, D. J.
    Geiser, B. P.
    [J]. ULTRAMICROSCOPY, 2011, 111 (06) : 448 - 457
  • [9] Gault B., 2012, Atom Probe Microscopy, V160
  • [10] Spatial Resolution in Atom Probe Tomography
    Gault, Baptiste
    Moody, Michael P.
    De Geuser, Frederic
    La Fontaine, Alex
    Stephenson, Leigh T.
    Haley, Daniel
    Ringer, Simon P.
    [J]. MICROSCOPY AND MICROANALYSIS, 2010, 16 (01) : 99 - 110