Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy

被引：10

作者：

Huang, XL ^{[1
]}

Labadi, Z ^{[1
]}

Hammiche, A ^{[1
]}

Krier, A ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2002年 / 35卷 / 23期

关键词：

D O I：

10.1088/0022-3727/35/23/309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled PbSe quantum-dots (QD) have been grown on GaSb(100) substrates from the liquid phase. A Pb-rich melt at 517degreesC was used with 10degreesC supercooling and with a short (10 Ins) melt-substrate contact time. Atomic force microscopy has revealed that the PbSe QDs are 4-10 nm in height and 10-40 nm in diameter, with an area density of 1.7 x 10(10) cm(-2). The growth of QDs occurs in the Volmer-Weber mode and is a result of the difference in lattice structures between the PbSe and GaSb rather than the lattice constants.

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页码：3091 / 3095

页数：5

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