Hole weak anti-localization in a strained-Ge surface quantum well

被引：9
作者：
Mizokuchi, R. [1 ,2 ]
Torresani, P. [1 ,2 ]
Maurand, R. [1 ,2 ]
Zeng, Z. [2 ,3 ]
Niquet, Y. -M. [2 ,3 ]
Myronov, M. [4 ]
De Franceschi, S. [1 ,2 ]
机构：
[1] CEA, INAC PHELIQS, F-38000 Grenoble, France
[2] Univ Grenoble Alpes, F-38000 Grenoble, France
[3] CEA, INAC MEM, F-38000 Grenoble, France
[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 06期
基金：
欧洲研究理事会;
关键词：
ELECTRON-SPIN; SPINTRONICS; GERMANIUM;
D O I：
10.1063/1.4997411
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibits a zero-field peak resulting from weak anti-localization. The peak develops and becomes stronger upon increasing the hole density by means of a top gate electrode. This behavior is consistent with a Rashba-type spin-orbit coupling whose strength is proportional to the perpendicular electric field and hence to the carrier density. In the low-density, the single-subband regime, by fitting the weak anti-localization peak to an analytic model, we extract the characteristic transport time scales and a spin splitting energy Delta(SO) similar to 1 meV. Tight-binding calculations show that DSO is dominated by a cubic term in the in-plane wave vector. Finally, we observe a weak anti-localization peak also for magnetic fields parallel to the quantum well and associate this finding to an effect of intersubband scattering induced by interface defects. Published by AIP Publishing.
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页数：5
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