Field-induced dielectric properties of laser ablated antiferroelectric (Pb0.99Nb0.02)(Zr0.57Sn0.38Ti0.05)0.98O3 thin films

被引：5

作者：

Bharadwaja, SSN ^{[1
]}

Krupanidhi, SB ^{[1
]}

机构：

[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 25期

关键词：

D O I：

10.1063/1.1332977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Niobium-modified lead zirconate stannate titanate antiferroelectric thin films with the chemical composition of (Pb0.99Nb0.02)(Zr0.57Sn0.38Ti0.05)(0.98)O-3 were deposited by pulsed excimer laser ablation technique on Pt-coated Si substrates. Field-induced phase transition from antiferroelectric to ferroelectric properties was studied at different fields as a function of temperature. The field forced ferroelectric phase transition was elucidated by the presence of double-polarization hysteresis and double-butterfly characteristics from polarization versus applied electric field and capacitance and voltage measurements, respectively. The measured forward and reverse switching fields were 25 kV/cm and 77 kV/cm, respectively. The measured dielectric constant and dissipation factor were 540 and 0.001 at 100 kHz, respectively, at room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)03851-1].

引用

页码：4208 / 4210

页数：3

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