Single-component chemically amplified resist based on dehalogenation of polymer

For chemically amplified resists, which generally consist of a polymer and an acid generator, the homogeneity of resist materials is a serious issue. The incorporation of acid generators into polymers via covalent bonds has attracted considerable attention because it removes the problem of compatibility between acid generators and polymers. In this study, we designed a single-component chemically amplified resist, taking advantage of the difference in the reaction mechanisms between electron beam resists and photoresists. The designed resist has a hydroxyl group as a proton source and halogen atoms as an anion source for acid generation. We demonstrated a new chemistry for a next-generation resist formula.