Research on Cu-W homogeneous film structure prepared by ion beam sputtering

被引：8

作者：

Ai, Yong-ping ^{[1
]}

Xie, Shi-kun ^{[1
]}

Zeng, Ying-ying ^{[1
]}

Yi, Rong-xi ^{[1
]}

Wang, Jun-ting ^{[1
]}

机构：

[1] Jinggangshan Univ, Coll Engn, Jian 343009, Jiangxi, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 496卷 / 1-2期

关键词：

Coating materials; Crystal structure; X-ray diffraction; MULTILAYERS; COMPOSITES; DEPOSITION;

D O I：

10.1016/j.jallcom.2010.02.020

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of technological parameters of homogeneous Cu-W film prepared by ion beam sputtering on film structure is researched. The results show that in homogeneous Cu-W film prepared by ion beam sputtering, tungsten exists in the way of solubilizing in part of copper with beta-tungsten as the skeleton. With the increase of copper target power, the grain size of copper firstly increases and then decreases. With the increase of tungsten target power, beta-tungsten tends to transform to the amorphous state and the grain size of copper obviously decreases. The deposition rate of film is mainly determined by tungsten target power. When the air pressure is lower than 1.0 Pa, with the increase of air pressure, the grain size of copper decreases. When the air pressure is higher than 1.0 Pa, the air pressure has no influence on the film structure. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：385 / 387

页数：3

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