A Bipolar >40-V Driver in 45-nm SOI CMOS Technology

被引：0
|
作者：
Ismail, Yousr [1 ]
Kim, Chang-Jin CJ [1 ]
Yang, Chih-Kong Ken [1 ]
机构：
[1] Univ Calif Los Angeles, Los Angeles, CA 90095 USA
来源：
2013 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a high-voltage driver in nanometer-scale, low-voltage SOI CMOS technology well beyond the voltage limits of standard devices. The drive level is near the voltage-tolerance limit of the body insulator. A novel, bidirectional, switched-capacitor output stage that combines both voltage-conversion and pulse-drive is introduced. The two-level driver is implemented in 45-nm SOI CMOS technology and uses only process-compliant devices. It achieves a maximum output drive of 44 V and occupies an area of 600 mu m x 350 mu m. The output drive resistance depends on the pumping frequency and is equal to 36 K Omega at a current consumption of 28 mA drawn from a 1.5-V supply.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits
    England, Troy D.
    Arora, Rajan
    Fleetwood, Zachary E.
    Lourenco, Nelson E.
    Moen, Kurt A.
    Cardoso, Adilson S.
    McMorrow, Dale
    Roche, Nicolas J-H.
    Warner, Jeffery H.
    Buchner, Stephen P.
    Paki, Pauline
    Sutton, Akil K.
    Freeman, Greg
    Cressler, John D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) : 4405 - 4411
  • [42] Embedded DRAM in 45-nm Technology and Beyond
    Anand, Darren L.
    Gorman, Kevin W.
    Jacunski, Mark D.
    Paparelli, Adrian J.
    IEEE DESIGN & TEST OF COMPUTERS, 2011, 28 (01): : 14 - 21
  • [43] A 92 GHz Bandwidth Distributed Amplifier in a 45 nm SOI CMOS Technology
    Kim, Joohwa
    Buckwalter, James F.
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2011, 21 (06) : 329 - 331
  • [44] A W-band Stacked FET Power Amplifier with 17 dBm Psat in 45-nm SOI CMOS
    Jayamon, Jefy
    Agah, Amir
    Hanafi, Bassel
    Dabag, Hayg
    Buckwalter, James
    Asbeck, Peter
    2013 IEEE TOPICAL CONFERENCE ON POWER AMPLIFIERS FOR WIRELESS AND RADIO APPLICATIONS (PAWR), 2013, : 85 - 87
  • [45] 167-GHz and 155-GHz High Gain D-band Power Amplifiers in CMOS SOI 45-nm Technology
    Hamani, Abdelaziz
    Siligaris, Alexandre
    Blampey, Benjamin
    Jimenez, Jose Luis Gonzalez
    2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2021, : 261 - 264
  • [46] Active Millimeter-Wave Phase-Shift Doherty Power Amplifier in 45-nm SOI CMOS
    Agah, Amir
    Dabag, Hayg-Taniel
    Hanafi, Bassel
    Asbeck, Peter M.
    Buckwalter, James F.
    Larson, Lawrence E.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (10) : 2338 - 2350
  • [47] A W-band Stacked FET Power Amplifier with 17 dBm Psat in 45-nm SOI CMOS
    Jayamon, Jefy
    Agah, Amir
    Hanafi, Bassel
    Dabag, Hayg
    Buckwalter, James
    Asbeck, Peter
    2013 IEEE TOPICAL CONFERENCE ON BIOMEDICAL WIRELESS TECHNOLOGIES, NETWORKS, AND SENSING SYSTEMS (BIOWIRELESS), 2013, : 79 - 81
  • [48] A 14-GHz, 22-dBm Series Doherty Power Amplifier in 45-nm CMOS SOI
    Levy, Cooper S.
    Vorapipat, Voravit
    Buckwalter, James F.
    2016 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2016, : 142 - 145
  • [49] A W-band Stacked FET Power Amplifier with 17 dBm Psat in 45-nm SOI CMOS
    Jayamon, Jefy
    Agah, Amir
    Hanafi, Bassel
    Dabag, Hayg
    Buckwalter, James
    Asbeck, Peter
    2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2013, : 156 - 158
  • [50] A W-band Stacked FET Power Amplifier with 17 dBm Psat in 45-nm SOI CMOS
    Jayamon, Jefy
    Agah, Amir
    Hanafi, Bassel
    Dabag, Hayg
    Buckwalter, James
    Asbeck, Peter
    2013 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2013, : 256 - 258
12345