A Bipolar >40-V Driver in 45-nm SOI CMOS Technology

被引：0

作者：

Ismail, Yousr ^{[1
]}

Kim, Chang-Jin CJ ^{[1
]}

Yang, Chih-Kong Ken ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Los Angeles, CA 90095 USA

来源：

2013 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a high-voltage driver in nanometer-scale, low-voltage SOI CMOS technology well beyond the voltage limits of standard devices. The drive level is near the voltage-tolerance limit of the body insulator. A novel, bidirectional, switched-capacitor output stage that combines both voltage-conversion and pulse-drive is introduced. The two-level driver is implemented in 45-nm SOI CMOS technology and uses only process-compliant devices. It achieves a maximum output drive of 44 V and occupies an area of 600 mu m x 350 mu m. The output drive resistance depends on the pumping frequency and is equal to 36 K Omega at a current consumption of 28 mA drawn from a 1.5-V supply.

引用

页数：4

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