Insights Into to the KX (X = Cl, Br, I) Adsorption-Assisted Stabilization of CsPbI2Br Surface

被引:15
作者
Li, Xiao-Fen [1 ]
Cheng, Song-Qi [1 ]
Zhou, Yu-Qian [1 ]
Ouyang, Wen-Hong [1 ]
Li, Shunning [2 ]
Liu, Bai-Xin [1 ]
Liu, Jian-Bo [1 ]
机构
[1] Tsinghua Univ, Key Lab Adv Mat MOE, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
[2] Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
基金
中国国家自然科学基金;
关键词
all-inorganic perovskites; defects; density functional theory; solar cells; surface passivation; PEROVSKITE SOLAR-CELLS; PLANE-WAVE; EFFICIENT; PASSIVATION; PERFORMANCE; DIFFUSION; STABILITY; COHP;
D O I
10.1002/smll.202202623
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Despite the excellent optoelectronic properties, organic-inorganic hybrid perovskite solar cells (PSCs) still present significant challenges in terms of ambient stability. CsPbI2Br, a member of all-inorganic perovskites, may respond to this challenge because of its inherent high stability against light, moisture, and heat, and therefore has gained tremendous attraction recently. However, the practical application of CsPbI2Br is still impeded by the notorious phenomenon of photoinduced halide segregation. Herein, by applying first-principles calculations, the stability, electronic structure, defect properties, and ion-diffusion properties of the stoichiometric CsPbI2Br (110) surface and that with the adsorption of KX (X = Cl, Br, I) are systematically investigated. It is found that the adsorbed KX can serve as an external substitute of the halogen vacancies on the surface, therefore inhibiting halogen segregation and improving the stability of the CsPbI2Br surface. The KX can also eliminate deep-level defect states caused by antisites, thereby contributing to the promoted optoelectronic properties of CsPbI2Br. The mechanistic understanding of surface passivation in this work can lay the foundation for the future design of CsPbI2Br PSCs with optimized optoelectronic performance.
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页数:10
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