A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application

被引：26

作者：

Liu, Jing ^{[1
]}

Wang, Qin ^{[1
]}

Long, Shibing ^{[1
]}

Zhang, Manhong ^{[1
]}

Liu, Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Lab Nanofabricat & Novel Devices Integrated Techn, Inst Microelect, Beijing 100029, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 05期

基金：

中国国家自然科学基金;

关键词：

FLOATING-GATE;

D O I：

10.1088/0268-1242/25/5/055013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure with a ZrO2 charge-trapping layer for non-volatile memory application. The superiority of this device over the traditional metal/Al2O3/Si3N4/SiO2/Si (MANOS) devices is much better data retention and enhanced program/erase efficiency. The MAZOS device exhibits excellent memory characteristics, including a large memory window of 7.1 V under +/- 11 V capacitance-voltage sweep, and a greatly improved data retention (only 16% charge loss for 10 years time) along with good endurance. The MAZOS device has a strong potential for future high-performance non-volatile memory application.

引用

页数：4

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