Investigation of the low-cycle fatigue mechanism for micron-scale monocrystalline silicon films

被引：33

作者：

Baumert, E. K. ^{[1
]}

Theillet, P-O ^{[1
]}

Pierron, O. N. ^{[1
]}

机构：

[1] Georgia Inst Technol, G W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA

来源：

ACTA MATERIALIA | 2010年 / 58卷 / 08期

基金：

美国国家科学基金会;

关键词：

Fatigue; Monocrystalline silicon; Thin film; Static fatigue; Frequency effects; SUBCRITICAL CRACK-GROWTH; POLYCRYSTALLINE SILICON; FRACTURE-TOUGHNESS; POLYSILICON MEMS; FAILURE; STRESS;

D O I：

10.1016/j.actamat.2010.01.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study investigated the cyclic and static fatigue properties of 10 mu m thick, deep reactive ion etched, monocrystalline silicon films Stress life fatigue curves and fatigue degradation rates vs stress curves were generated at both 4 and 40 kHz, at 30 degrees C, 50% relative humidity (RH) A significant frequency effect was observed, with shorter fanatic lives and faster damage accumulation rates at 4 kHz Static fatigue was also observed with shorter static lifetimes at 80 degrees C, 90% RH than at 30 degrees C, 50% RH Fracture surface evaluation did not reveal any major difference between cyclically and statically fatigued devices These experimental results confirm that the fatigue of micron-scale silicon is not purely mechanical The study also proposes a fatigue scenario based on time-dependent subcritical crack growth to account for the low-cycle fatigue regime (C) 2010 Acta Materialia Inc Published by Elsevier Ltd All rights reserved

引用

页码：2854 / 2863

页数：10

共 41 条

[1] Surface topography evolution and fatigue fracture in polysilicon MEMS structures [J].

Allameh, SM ;

Shrotriya, P ;

Butterwick, A ;

Brown, SB ;

Soboyejo, WO .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2003, 12 (03) :313-324

[2] Further considerations on the high-cycle fatigue of micron-scale polycrystalline silicon [J].

Alsem, D. H. ;

Muhlstein, C. L. ;

Stach, E. A. ;

Ritchie, R. O. .

SCRIPTA MATERIALIA, 2008, 59 (09) :931-935

[3] Very high-cycle fatigue failure in micron-scale polycrystalline silicon films: Effects of environment and surface oxide thickness [J].

Alsem, D. H. ;

Timmerman, R. ;

Boyce, B. L. ;

Stach, E. A. ;

De Hosson, J. Th. M. ;

Ritchie, R. O. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)

[4] Mechanisms for fatigue of micron-scale silicon structural films [J].

Alsem, Daan Hein ;

Pierron, Olivier N. ;

Stach, Eric A. ;

Muhlstein, Christopher L. ;

Ritchie, Robert O. .

ADVANCED ENGINEERING MATERIALS, 2007, 9 (1-2) :15-30

[5] Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within the oxide layer [J].

Alsem, DH ;

Stach, EA ;

Muhlstein, CL ;

Ritchie, RO .

APPLIED PHYSICS LETTERS, 2005, 86 (04) :041914-1

[6] Tensile-mode fatigue testing of silicon films as structural materials for MEMS [J].

Ando, T ;

Shikida, M ;

Sato, K .

SENSORS AND ACTUATORS A-PHYSICAL, 2001, 93 (01) :70-75

[7]

[Anonymous], BIOSTATISTICAL ANAL

[8] Fatigue of polycrystalline silicon under long-term cyclic loading [J].

Bagdahn, J ;

Sharpe, WN .

SENSORS AND ACTUATORS A-PHYSICAL, 2003, 103 (1-2) :9-15

[9] Highly localized surface oxide thickening on polycrystalline silicon thin films during cyclic loading in humid environments [J].

Budnitzki, M. ;

Pierron, O. N. .

ACTA MATERIALIA, 2009, 57 (10) :2944-2955

[10] The influence of nanoscale atomic-layer-deposited alumina coating on the fatigue behavior of polycrystalline silicon thin films [J].

Budnitzki, M. ;

Pierron, O. N. .

APPLIED PHYSICS LETTERS, 2009, 94 (14)

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