Taguchi GRA for multi-response optimization of16 nm WSi2/TiO2 NMOS device

被引：0

作者：

Shamsudin, Nor F. ^{[1
]}

Salehuddin, F. ^{[1
]}

Roslan, Ameer F. ^{[1
]}

Zain, A. S. M. ^{[1
]}

Kaharudin, K. E. ^{[1
]}

Maheran, A. H. Afifah ^{[1
]}

Ahmed, I. ^{[2
]}

机构：

[1] Univ Tekn Malaysia Melaka, Fak Kejuruteraan Elekt & Kejuruteraan Komputer, Micro & Nano Elect MiNE, Durian Tunggal 76100, Melaka, Malaysia

[2] Univ Tenaga Nas, Coll Engn, Dept Elect & Commun Engn, Jalan IKRAM UNITEN, Kajang 43000, Selangor, Malaysia

来源：

PROCEEDINGS OF MECHANICAL ENGINEERING RESEARCH DAY 2019 (MERD'19) | 2019年

关键词：

Multi-Response; Taguchi; grey rational analysis;

D O I：

暂无

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

In this research, multi response characteristics of 16 nm NMOS device were analyzed using Taguchi GRA. The L-9 Taguchi method, Signal Noise Ratio and ANOVA were used to optimize the effect of process parameters such as Source/Drain and Halo implantation processes. All the simulated values for characteristic are converted to grey relational grade (GRG) and the level of process parameter with the highest GRG are selected as the most optimal level. Most of the results obtained were within the range and met the requirement of low power technology as predicted by ITRS 2013. As a conclusion, the optimization of multi response from the device has been achieved using Taguchi GRA.

引用

页码：165 / 166

页数：2

共 6 条

[1]

Kaharudin KE, 2016, 2016 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE) PROCEEDINGS, P64, DOI 10.1109/SMELEC.2016.7573592

[2]

Kaharudin KE., 2018, J TELECOMMUNICATION, V10, P69

[3] Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale CMOS and SOI devices [J].