S-band High-efficiency Miniaturized Wideband GaN Power Amplifier

被引：0

作者：

Li, Fei ^{[1
]}

Zhong, Shi-Chang ^{[1
]}

机构：

[1] Nanjing Elect Devices Inst, Nanjing 210016, Peoples R China

来源：

CONFERENCE PROCEEDINGS OF 2019 IEEE INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING, COMMUNICATIONS AND COMPUTING (IEEE ICSPCC 2019) | 2019年

关键词：

high-efficiency; miniaturized; wideband;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper proposes a new high-efficiency miniaturized S-band internally matched high power amplifier (HPA), which developed with 24mm AlGaN/GaN high-electron mobility transistors. Load-pull method is used to design the amplifier, the out network matched to compromise between power added efficiency (PAE) and output power. Experimental results show that the class C GaN HPA can be realized more than 62% PAE and 120W output power over the band of 2.6-3.7 GHz, with drain voltage of 32 V, pulse-width of 3ms and duty-cycle of 30%. The HPA size is 6.6mmx15mm.

引用

页数：4

共 9 条

[1] Wideband, high-efficiency, high-power GaN amplifiers, using MIC and quasi-MMIC technologies, in the 1-4 GHz range [J].

Berrached, Chamssedine ;

Bouw, Diane ;

Camiade, Marc ;

El-Akhdar, Kassem ;

Barataud, Denis ;

Neveux, Guillaume .

INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2015, 7 (01) :1-12

[2] GaN Takes the Lead [J].

Campbell, Charles F. ;

Balistreri, Anthony ;

Kao, Ming-Yih ;

Dumka, Deep C. ;

Hitt, John .

IEEE MICROWAVE MAGAZINE, 2012, 13 (06) :44-53

[3] 12W/mm power density AlGaN/GaN HEMTs on sapphire substrate [J].

Chini, A ;

Buttari, D ;

Coffie, R ;

Heikman, S ;

Keller, S ;

Mishra, UK .

ELECTRONICS LETTERS, 2004, 40 (01) :73-74

[4] 2-4 GHz wideband power amplifier with ultra-flat gain and high PAE [J].

Ding, X. ;

He, S. ;

You, F. ;

Xie, S. ;

Hu, Z. .

ELECTRONICS LETTERS, 2013, 49 (05) :326-+

[5] Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications [J].

Florian, Corrado ;

Cignani, Rafael ;

Santarelli, Alberto ;

Filicori, Fabio .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (12) :4492-4504

[6]

Joh J, 2004, MICROELECTRON RELIAB, V49, P117

[7] GaN HEMT [J].

Komiak, James J. .

IEEE MICROWAVE MAGAZINE, 2015, 16 (03) :97-105

[8] A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs [J].

Pengelly, Raymond S. ;

Wood, Simon M. ;

Milligan, James W. ;

Sheppard, Scott T. ;

Pribble, William L. .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (06) :1764-1783

[9] High efficiency 33-37 GHz 20 W GaN HEMT power amplifier MMIC [J].

Tao, Hong-Qi ;

Hong, Wei ;

Zhang, Bin ;

Yu, Xu-Ming .

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2017, 59 (10) :2441-2444

← 1 →