Hydrogen effect on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors

被引：6

作者：

Irokawa, Yoshihiro ^{[1
]}

Nabatame, Toshihide ^{[1
]}

Ohi, Akihiko ^{[1
]}

Ikeda, Naoki ^{[1
]}

Sakata, Osami ^{[1
]}

Koide, Yasuo ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / 10期

关键词：

D O I：

10.7567/1347-4065/ab476a

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of hydrogen on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors was investigated by capacitance-voltage (C-V) measurements. The results showed that hydrogen exposure shifted the C-V curves towards the negative bias direction, indicating that hydrogen was incorporated into Al2O3 as a positive charge. Dry air exposure shifted the C-V curves back towards the positive bias direction more quickly than nitrogen did, which suggests that Pt has a catalytic function. Moreover, applying a negative bias to Pt resulted in faster shifts of the C-V curves back towards the positive bias direction. These results may suggest that hydrogen plays a critical role in post-metallization annealing. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

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