Fabrication of fully epitaxial magnetic tunnel junctions with a Co2MnSi thin film and a MgO tunnel barrier

被引：17
作者：
Kijima, H. [1 ]
Ishikawa, T. [1 ]
Marukame, T. [1 ]
Matsuda, K.-I. [1 ]
Uemura, T. [1 ]
Yamamoto, M. [1 ]
机构：
[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, Japan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期
关键词：
magnetic tunnel junctions; tunnel magnetoresistance; half-metallic ferromagnets; Heusler alloys; Co2MnSi; MgO tunnel barrier;
D O I：
10.1016/j.jmmm.2006.10.919
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2MnSi (CMS) thin film having the ordered L2(1) structure as a lower electrode, a MgO tunnel barrier, and a Co50Fe50 upper electrode. Reflection high-energy electron diffraction patterns observed in situ for each layer in the MTJ layer structure during fabrication clearly indicated that all layers of the CMS lower electrode, MgO tunnel barrier, and Co50Fe50 upper electrode grew epitaxially. The microfabricated fully epitaxial CMS/MgO/Co50Fe50 MTJs demonstrated relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：2006 / 2008
页数：3
相关论文
共 15 条
[1]   NEW CLASS OF MATERIALS - HALF-METALLIC FERROMAGNETS [J].
DEGROOT, RA ;
MUELLER, FM ;
VANENGEN, PG ;
BUSCHOW, KHJ .
PHYSICAL REVIEW LETTERS, 1983, 50 (25) :2024-2027
[2]   Large tunneling magnetoresistance at room temperature using a Heusler alloy with the B2 structure [J].
Inomata, K ;
Okamura, S ;
Goto, R ;
Tezuka, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (4B) :L419-L422
[3]   SEARCH FOR HALF-METALLIC COMPOUNDS IN CO(2)MNZ (Z=IIIB, IVB, VB ELEMENT) [J].
ISHIDA, S ;
FUJII, S ;
KASHIWAGI, S ;
ASANO, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (06) :2152-2157
[4]   Structural and magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe thin films deposited using magnetron sputtering [J].
Ishikawa, T ;
Marukame, T ;
Matsuda, K ;
Uemura, T ;
Arita, M ;
Yamamoto, M .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
[5]   TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].
JULLIERE, M .
PHYSICS LETTERS A, 1975, 54 (03) :225-226
[6]   Co2MnSi Heusler alloy as magnetic electrodes in magnetic tunnel junctions [J].
Kämmerer, S ;
Thomas, A ;
Hütten, A ;
Reiss, G .
APPLIED PHYSICS LETTERS, 2004, 85 (01) :79-81
[7]   Epitaxial growth of full-Heusler alloy Co2MnSi thin films on MgO-buffered MgO substrates [J].
Kijima, H. ;
Ishikawa, T. ;
Marukame, T. ;
Koyama, H. ;
Matsuda, K. ;
Uemura, T. ;
Yamamoto, M. .
IEEE TRANSACTIONS ON MAGNETICS, 2006, 42 (10) :2688-2690
[8]   Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier [J].
Marukame, T ;
Ishikawa, T ;
Matsuda, K ;
Uemura, T ;
Yamamoto, M .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
[9]   Fabrication of fully epitaxial magnetic tunnel junctions using full-Heusler alloy Co2Cr0.6Fe0.4Al thin film and MgO tunnel barrier [J].
Marukame, T ;
Kasahara, T ;
Matsuda, K ;
Uemura, T ;
Yamamoto, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19) :L521-L524
[10]   High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film [J].
Marukame, Takao ;
Ishikawa, Takayuki ;
Matsuda, Ken-Ichi ;
Uemura, Tetsuya ;
Yamamoto, Masafumi .
APPLIED PHYSICS LETTERS, 2006, 88 (26)
12