Influence of bank geometry on the electrical characteristics of printed organic field-effect transistors

被引:3
作者
Jo, Youngmin [1 ]
Park, Hyunjin [2 ]
Ahn, Hyungju [3 ]
Kim, Yun Ho [2 ,4 ]
Jung, Sungjune [5 ]
机构
[1] Pohang Univ Sci & Technol POSTECH, Sch Interdisciplinary Biosci & Bioengn, Pohang 37673, South Korea
[2] Korea Res Inst Chem Technol, Adv Mat Div, Daejeon 34114, South Korea
[3] Pohang Accelerator Lab, Pohang 37673, South Korea
[4] Univ Sci & Technol, KRICT Sch, Chem Convergence Mat & Proc, Daejeon 34113, South Korea
[5] Pohang Univ Sci & Technol POSTECH, Dept Creat IT Engn, Pohang 37673, South Korea
来源
FLEXIBLE AND PRINTED ELECTRONICS | 2019年 / 4卷 / 04期
关键词
printed electronics; organic field-effect transistors; uniformity; bank; crystallinity; ALIGNED CRYSTALLINE DOMAINS; HIGH-MOBILITY; HIGH-PERFORMANCE; FILMS; STABILITY; ARRAYS;
D O I
10.1088/2058-8585/ab56b7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrical characteristics of organic field-effect transistors (OFETs) based on small-molecule organic semiconductors (OSCs) have been significantly improved by employing various fabrication techniques in solution processes to enhance the OSC crystallinity. However, complicated fabrication and inhomogeneity of OFETs remain as challenges before commercialization. In this work, we have efficiently controlled the size and orientation of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) crystalline domains by tuning the Cytop bank dimension, in which OSC inks are printed, to improve the device performance. The optimized bank pattern forms uniform thin film morphology and well-aligned TIPS-pentacene crystalline domains along the charge transport direction, resulting in four-fold increase in field-effect mobility and one third reduction in relative standard deviation.
引用
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页数:7
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