Tunnel barrier formation in silicon nanowires

被引：10

作者：

Altebaeumer, T ^{[1
]}

Ahmed, H ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 2A期

关键词：

Coulomb blockade; silicon single-electron transistor; voltage-dependent tunnel barriers; double dot;

D O I：

10.1143/JJAP.42.414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multiple tunnel junctions have been realized in silicon using highly doped nanowires in silicon-on-insulator material by making use of pattern-dependent local oxidation. The electrical characteristics show clear Coulomb blockade oscillations of a single dot. On depleting the nanowires with side gates, peak pairing is observed in the oscillations. This characteristic of double dot structures can be explained by the creation of additional tunnel barriers in the nanowire due to the potential distribution caused by the dopants.

引用

页码：414 / 417

页数：4

共 12 条

[1] Silicon nanowires and their application in bi-directional electron pumps [J].

Altebaeumer, T ;

Ahmed, H .

MICROELECTRONIC ENGINEERING, 2001, 57-8 :1029-1033

[2] Electrical characteristics of two Coulomb blockade devices driven by a periodically oscillating potential [J].

Altebaeumer, T ;

Ahmed, H .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) :1350-1356

[3] Doped silicon single electron transistors with single island characteristics [J].

Augke, R ;

Eberhardt, W ;

Single, C ;

Prins, FE ;

Wharam, DA ;

Kern, DP .

APPLIED PHYSICS LETTERS, 2000, 76 (15) :2065-2067

[4] Conductance peak splitting in hole transport through a SiGe double quantum dot [J].

Cain, PA ;

Ahmed, H ;

Williams, DA .

APPLIED PHYSICS LETTERS, 2001, 78 (23) :3624-3626

[5] Modelling of structural and threshold voltage characteristics of randomly doped silicon nanowires in the Coulomb-blockade regime [J].

Evans, GJ ;

Mizuta, H ;

Ahmed, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (10) :5837-5840

[6] TIME-RESOLVED MEASUREMENT OF SINGLE-ELECTRON TUNNELING IN A SI SINGLE-ELECTRON TRANSISTOR WITH SATELLITE SI ISLANDS [J].

FUJIWARA, A ;

TAKAHASHI, Y ;

MURASE, K ;

TABE, M .

APPLIED PHYSICS LETTERS, 1995, 67 (20) :2957-2959

[7] Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation [J].

Horiguchi, S ;

Nagase, M ;

Shiraishi, K ;

Kageshima, H ;

Takahashi, Y ;

Murase, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (1AB) :L29-L32

[8] Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor [J].

Lee, SD ;

Park, KS ;

Park, JW ;

Moon, YM ;

Choi, JB ;

Yoo, KH ;

Kim, J .

APPLIED PHYSICS LETTERS, 2000, 77 (15) :2355-2357

[9] SELF-LIMITING OXIDATION FOR FABRICATING SUB-5 NM SILICON NANOWIRES [J].

LIU, HI ;

BIEGELSEN, DK ;

PONCE, FA ;

JOHNSON, NM ;

PEASE, RFW .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1383-1385

[10] Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire [J].

Smith, RA ;

Ahmed, H .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2699-2703

← 1 2 →