Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with composition-varying AlGaN multilayer barriers

被引：22

作者：

Yin, Yi An ^{[1
]}

Wang, Naiyin ^{[1
]}

Fan, Guanghan ^{[1
]}

Zhang, Yong ^{[1
]}

机构：

[1] S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2014年 / 76卷

基金：

中国国家自然科学基金;

关键词：

AlGaN; Deep-ultraviolet light-emitting diodes; Multilayer barrier; Numerical simulation; POLARIZATION;

D O I：

10.1016/j.spmi.2014.10.003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this study, the characteristics of deep-ultraviolet light-emitting diodes (DUV-LEDs) with composition-varying AlGaN multilayer barriers are investigated numerically. The simulation results demonstrate that the proposed DUV-LEDs have better device performances, i.e., higher light output power and internal quantum efficiency, over their counterparts with typical single-layer AlGaN barriers. These improvements are attributed to the reduced markedly polarization-induced electrostatic field within the quantum wells (QWs), which is beneficial to enhance the electron-hole spatial overlap in QWs, suppress the electron leakage and increase the hole injection efficiency. Furthermore, the efficiency droop is also reduced significantly when the composition-varying AlGaN multilayer barriers are adopted. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：149 / 155

页数：7

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