Wide tuning range of a CMOS RF bandpass filter for wireless applications

被引：0

作者：

Gao, Zhiqiang ^{[1
]}

Yu, Mingyan ^{[1
]}

Ye, Yizheng ^{[1
]}

Ma, Jianguo ^{[1
]}

机构：

[1] Harbin Inst Technol, Ctr Microelect, Harbin 150006, Peoples R China

来源：

2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2(nd) order RF bandpass filter with high-Q active inductor using low-voltage is presented. In the filter a design technique for a tunable high-Q CMOS active inductor operating in the wide RF-band is described. Simulated performance is presented showing that the center frequency of filter using a 0.25-um CMOS process can be operated at the 1.60G similar to 2.45GHz frequency band under a 1.8V power supply and quality factor is adjusted from 30 similar to 200 when f(C)approximate to 2.45GHz.

引用

页码：53 / 56

页数：4

共 9 条

[1] ELMALA MAI, 2001, ASIC SOC C 2001 P 14, P88
[2] KARSILAYAN A, 2000, P IEEE MIDW S CIRC S
[3] Improvements to performance of spiral inductors on insulators
Kelly, D
Wright, F
[J]. 2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, : 431 - 433
[4] KUHN WB, 1998, IEEE T MTT, P2577
[5] LI D, 2001, P IEEE INT SOL STAT, P368
[6] PIPOLOS YP, 1996, IEEE J SOLID-ST CIRC, P1517
[7] THANACHAYANONT A, 1999, THESIS U LONDON
[8] Wu Y, 2000, ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL IV, P149, DOI 10.1109/ISCAS.2000.858710
[9] WU Y, 2003, CIRCUITS SYSTEMS, V2, P942

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