Recent breakthroughs in carrier depletion based silicon optical modulators

被引：201

作者：

Reed, Graham T. ^{[1
]}

Mashanovich, Goran Z. ^{[1
]}

Gardes, Frederic Y. ^{[1
]}

Nedeljkovic, Milos ^{[1
]}

Hu, Youfang ^{[1
]}

Thomson, David J. ^{[1
]}

Li, Ke ^{[2
]}

Wilson, Peter R. ^{[2
]}

Chen, Sheng-Wen ^{[3
]}

Hsu, Shawn S. ^{[3
]}

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

[2] Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

[3] Natl Tsing Hua Univ, Dept Elect Engn, High Speed Devices & Integrated Circuits Grp, Hsinchu, Taiwan

来源：

NANOPHOTONICS | 2014年 / 3卷 / 4-5期

基金：

英国工程与自然科学研究理事会;

关键词：

modulators; silicon photonics; depletion; MACH-ZEHNDER MODULATOR; 1.3; MU-M; HIGH-SPEED; LOW-VOLTAGE; ELECTROABSORPTION MODULATOR; ELECTROOPTIC MODULATION; PHOTONICS; PERFORMANCE; COMPACT; COMMUNICATION;

D O I：

10.1515/nanoph-2013-0016

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission links.

引用

页码：229 / 245

页数：17

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