Negative Dynamic RON in Vertical GaN PiN Diode: The Impact of Conductivity Modulation

被引：0
作者：
Han, Shaowen [1 ]
Yang, Shu [1 ]
Sheng, Kuang [1 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou, Peoples R China
来源：
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年
基金：
中国国家自然科学基金;
关键词：
Conductivity modulation; GaN; hole injection; power rectifiers; negative dynamic R-ON;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this work, we reveal the transient behavior of conductivity modulation and its dependence on conduction time (t(ON)) and conduction current (I-ON) in vertical GaN-on-GaN PiN diode. By virtue of the photon-enhanced conductivity modulation, a negative dynamic ON-resistance (R-ON) is firstly demonstrated in the vertical GaN PiN diode which has been verified by high-speed board-level tests.
引用
收藏
页码：294 / 297
页数：4
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