Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation

被引：47

作者：

Benoy, M. D. ^{[1
]}

Mohammed, E. M. ^{[2
]}

Suresh, Babu M. ^{[2
]}

Binu, P. J. ^{[2
]}

Pradeep, B. ^{[3
]}

机构：

[1] MA Coll, Dept Phys, Kothamangalam 686666, Kerala, India

[2] Maharajas Coll, Dept Phys, Ernakulam 682011, Kerala, India

[3] Cochin Univ Sci & Technol, Dept Phys, Cochin 682022, Kerala, India

来源：

BRAZILIAN JOURNAL OF PHYSICS | 2009年 / 39卷 / 04期

关键词：

Thin films; ITO; ARE; ELECTRICAL-PROPERTIES;

D O I：

10.1590/S0103-97332009000600003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for films having different thickness. The resulting films are polycrystalline and show approximate to 90% transmission in the visible region. Hall effect measurements at room temperature for a film with a nominal thickness of approximate to 350 nm shows a relatively high carrier concentration approximate to 6.3 x 10(20) cm(-3), mobility approximate to 16 cm(2) V(-1)s(-1), with a low resistivity approximate to 1.01x10(-3) Omega cm.

引用

页码：629 / 632

页数：4

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