A Low Phase-Noise SiGe Colpitts VCO with Wide Tuning Range for UWB Applications

被引：0

作者：

Esswein, Alexander ^{[1
]}

Dehm-Andone, Gunther ^{[1
]}

Weigel, Robert ^{[1
]}

Aleksieieva, Anna ^{[2
]}

Vossiek, Martin ^{[2
]}

机构：

[1] Friedrich Alexander Univ Erlangen Nuremberg, Inst Elect Engn, Cauerstr 9, D-91058 Erlangen, Germany

[2] Clausthal Univ Tech, Inst Elect Informat Technol, Leibnizstr 28, D-38678 Clausthal Zellerfeld, Germany

来源：

40TH EUROPEAN MICROWAVE CONFERENCE | 2010年

关键词：

Voltage controlled oscillators; Ultra wideband; Phase noise; Analog integrated circuits; DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An integrated differential common collector Colpitts VCO with a wide tuning range is presented in this paper. The circuit was designed and fabricated in the IHP Technologies SGB25V 250nm SiGe:C BiCMOS process. It provides a superior low phase noise performance of -115 dBc/Hz covering the frequency range of 6.7 to 8.7 GHz for UWB pulsed frequency modulated secondary radar application. An additional common collector output buffer was implemented as well. The circuit provides an overall output power of -10dBm single-ended with a power dissipation of 47mW including the on-chip buffer. This paper also shows the modifications and improvements done at the mmwave topology to reduce size and to improve the tuning range.

引用

页码：1599 / 1602

页数：4

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