Solar cell heterojunction a-SiC:H/c-Si structure under dark and illumination

被引：0
|
作者：
Perny, Milan [1 ]
Saly, Vladimir [1 ]
Mikolasek, Miroslav [1 ]
Vary, Michal [1 ]
Huran, Jozef [2 ]
机构：
[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Ilkovicova 3, Bratislava 812, Slovakia
[2] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia
来源：
PROCEEDINGS OF THE 2015 16TH INTERNATIONAL SCIENTIFIC CONFERENCE ON ELECTRIC POWER ENGINEERING (EPE) | 2015年
关键词：
DC characterization; impedance spectroscopy; equivalent circuit; doping; optimalization technology;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Thin films of p-doped amorphous SiC used as an emitter layer for heterojunction solar cells have been the subject of this work Thin amorphous SiC films were prepared by PECVD technology. Impact of dopation on the resulting properties of heterojunction was the main object of this study. The DC measurements under dark were performed in order to detect basic electronic properties as a diode ideality factor and saturation current. PV parameters such as fill factor, open circuit voltage and efficiency were obtained from DC measurements under illumination. The impedance spectroscopy analysis was performed by following Cole-Cole principle.
引用
收藏
页码：672 / 675
页数：4
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