Sublimation molecular beam epitaxy of silicon-based structures

被引：8
|
作者：
Kuznetsov, V. P. [1 ]
Krasil'nik, Z. F. [2 ]
机构：
[1] Lobachevsky State Univ Nizhni Novgorod, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia
[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
SI; ELECTROLUMINESCENCE; DIODES;
D O I：
10.1134/S1063782610030218
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The capabilities of various methods for fabricating silicon-based single-crystal structures are analyzed. The features and advantages of sublimation molecular-beam epitaxy are discussed.
引用
收藏
页码：396 / 400
页数：5
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