Impurity photovoltaic effect in crystalline silicon solar cells

被引：4

作者：

Kasai, H ^{[1
]}

Sato, T ^{[1
]}

Matsumura, H ^{[1
]}

机构：

[1] JAIST, Tatsunokuchi, Ishikawa 92312, Japan

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654067

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The effect of impurity traps for efficiency improvement of solar cells (called impurity photovoltaic effect) has been investigated by measuring optical absorption and characteristics of crystalline silicon solar cells. Energy level and spatial position of the impurity traps, and compensation of charges caused by the traps are definite requirements to improve the cell efficiency by the IPV effect under suppression of carrier recombination. Indium is selected as one of proper impurities that satisfy these requirements in crystalline silicon. For indium introduced crystalline silicon solar cell, it is possible to increase the photocurrent without degrading the values of open circuit voltage. It is concluded that the IPV effect is useful to improve the cell efficiency.

引用

页码：215 / 218

页数：4