Hydrogenation of Mg-Doped InGaZnO Thin-Film Transistors for Enhanced Electrical Performance and Stability

In this work, the hydrogenation (H) of Mg-doped amorphous InGaZnO (a-IGZO:Mg/H) thin-film transistors (TFTs) was fabricated via RF sputtering method. As a consequence, the a-IGZO:Mg/H TFT with field-effectmobility of 35.6 cm(2)/Vs, lowsub-threshold swing of 0.21 V/dec, high I-on/I-off of 10(8), andsmall threshold voltage (V-th) of 0.5 V was obtained. In addition, the a-IGZO:Mg/H TFT exhibits the best stability for small V-th shifts of 1.5 (-1.7) V, 2.6 (-2.8) V, and 3.5 (-3.6) V under the conditions of gate bias, light illumination, and the temperature stress test. The X-ray photo-electron spectroscopy band structure and oxygen vacancy (V-O) analysis indicate that the enhanced performance and stability are owing to the appropriate Mg/H co-doping concentration. This is because the Mg/H co-doped not only controlled the carrier concentration, but also reduced V-O and interface trap density. Overall, the optimized Mg/H co-doped a-IGZO TFTs have provided an effective pathway to achieve high-performance oxide TFTs with superior stability.