Preparation of far-red emitting Ba2YTaO6:Mn4+ phosphors for plant growth LEDs applications

被引：22
作者：
Fang, Yongzheng [1 ]
Wang, Chengze [1 ]
Zhang, Yan [1 ]
Zhao, Guoying [1 ]
Liu, Yufeng [1 ]
Liu, Zhifu [1 ]
Lin, Chun Che [2 ,3 ]
Hou, Jingshan [1 ]
机构：
[1] Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 201418, Peoples R China
[2] Natl Taipei Univ Technol, Inst Organ & Polymer Mat, Taipei 106344, Taiwan
[3] Natl Taipei Univ Technol, Res & Dev Ctr Smart Text Technol, Taipei 106344, Taiwan
来源：
INORGANIC CHEMISTRY COMMUNICATIONS | 2021年 / 128卷
基金：
中国国家自然科学基金;
关键词：
Mn4+-doped red phosphors; Flux; Moisture resistance property; Plant growth; PHOTOLUMINESCENCE PROPERTIES; LUMINESCENCE PROPERTIES; EMISSION; SINGLE; MN4+; ENHANCEMENT; MORPHOLOGY; TB3+; MG2+; LI+;
D O I：
10.1016/j.inoche.2021.108568
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
A series of far-red emitting Ba2YTaO6 :Mn4+ phosphors aiming for plant growth LEDs applications was prepared by using the flux method. LiF was found to be the best flux, and its influence on the crystal structure and photoluminescence properties was investigated. Under 325 nm light excitation, the as-prepared phosphors show far-red emission around 692 nm due to the E-2(g)-> (4)A(2g) transition of Mn4+ ions. The optimal Mn4+ doping concentration was determined to be 0.4 mol%, and the appropriate usage of LiF was found in the range of 7-11 mol %. The as-prepared Ba2YTaO6:0.004Mn(4+),0.09LiF phosphor shows outstanding water-resistance property compared with commercially used K2SiF6:Mn4+ phosphor. Finally, a far-red emitting LED was fabricated by using a 375 nm near-UV chip with the as-prepared Ba2YTaO6:0.004Mn(4+),0.09LiF phosphor.
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页数：7
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