On the structure and surface chemical composition of indium-tin oxide films prepared by long-throw magnetron sputtering

被引:31
作者
Chuang, M. J. [2 ]
Huang, H. F. [3 ]
Wen, C. H. [3 ]
Chu, A. K. [1 ]
机构
[1] Natl Sun Yat Sen Univ, Inst Electroopt Engn & Semicond Technol, Ctr Res & Dev, Kaohsiung 80424, Taiwan
[2] Chien Kuo Technol Univ, Dept Elect Engn, Changhua, Taiwan
[3] Ind Technol Res Inst, Mat & Chem Res Labs, Hsinchu 310, Taiwan
关键词
ITO; rf magnetron sputtering; X-ray diffraction; X-ray photoelectron spectroscopy; RAY PHOTOELECTRON-SPECTROSCOPY; ELECTRON-BEAM EVAPORATION; ITO THIN-FILMS; ROOM-TEMPERATURE; ION-BOMBARDMENT; DEPOSITION; DC; ULTRAVIOLET; OXYGEN;
D O I
10.1016/j.tsf.2008.10.146
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Structures and surface chemical composition of indium tin oxide (ITO) thin films prepared by long-throw radio-frequency magnetron sputtering technique have been investigated. The ITO films were deposited on glass substrates using a 20 cm target-to-substrate distance in a pure argon sputtering environment. X-ray diffraction results showed that an increase in substrate temperature resulted in ITO structure evolution from amorphous to polycrystalline. Field-emission scanning electron microscopy micrographs suggested that the ITO films were free of bombardment of energetic particles since the microstructures of the films exhibited a smaller grain size and no sub-grain boundary could be observed. The surface composition of the ITO films was characterized by X-ray photoelectron spectroscopy (XPS). Oxygen atoms in both amorphous and crystalline ITO structures were observed from O 1 s XPS spectra. However, the peak of the oxygen atoms in amorphous ITO phase could only be found in samples prepared at low substrate temperatures. Its relative peak area decreased drastically when substrate temperatures were larger than 200 degrees C. In addition, a composition analysis from the XPS results revealed that the films deposited at low substrate temperatures contained high concentration of oxygen at the film Surfaces. The oxygen-rich surfaces can be attributed to hydrolysis reactions of indium oxides, especially when large amount of the amorphous ITO were developed near the film Surfaces. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:2290 / 2294
页数:5
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