Generation of thermal donors in silicon: Effect of self-interstitials

被引：4

作者：

Voronkov, VV ^{[1
]}

Voronkova, GI ^{[1
]}

Batunina, AV ^{[1
]}

Golovina, VN ^{[1
]}

Mil'vidskii, MG ^{[1
]}

Gulyaeva, AS ^{[1
]}

Tyurina, NB ^{[1
]}

Arapkina, LV ^{[1
]}

机构：

[1] State Res Inst Rare Met, Moscow 109017, Russia

来源：

PHYSICS OF THE SOLID STATE | 2000年 / 42卷 / 11期

关键词：

D O I：

10.1134/1.1324035

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The generation of low-temperature thermal donors (TD) in silicon is sensitive to the sample cooling rate (from the anneal to room temperature) and the ambient (air or vacuum). This effect is most clearly pronounced in the case of annealing at 500 degreesC, is noticeable at 480 degreesC, and is practically undetectable at 450 degreesC. The results are interpreted satisfactorily as being due to the TD generation becoming enhanced in the presence of silicon self-interstitial (Si-I) atoms. These atoms are emitted by thermal donors, to be subsequently absorbed by sinks, particularly the sample surface and grown-in microdefects (vacancy voids). When annealing in a vacuum, the surface acts as the main sink. If the anneal is done in air, this sink is passivated as a result of oxidation and/or contamination, with voids becoming the main sinks; as a result, the concentration of Si-I atoms increases substantially and the generation rate is enhanced. Rapid cooling brings about a partial passivation of the voids (as a result of their becoming decorated by rapidly diffusing impurities) and an additional enhancement of the generation rate. The calculated rate curves obtained within this model are well fitted to the experiment. (C) 2000 MAIK "Nauka/ Interperiodica".

引用

页码：2022 / 2029

页数：8

共 27 条

[1]

BABICH VM, 1977, OXYGEN SINGLE CRYSTA

[2] EFFECT OF CARBON ON THERMAL DONOR FORMATION IN HEAT-TREATED PULLED SILICON CRYSTALS [J].