The formation of CdTe thin films by the stacked elemental layer method

被引：20

作者：

Cruz, LR

de Avillez, RR

机构：

[1] Inst Mil Engn, BR-22290270 Rio De Janeiro, Brazil

[2] Pontificia Univ Catolica Rio de Janeiro, BR-22543900 Rio De Janeiro, Brazil

来源：

THIN SOLID FILMS | 2000年 / 373卷 / 1-2期

关键词：

cadmium telluride; reaction kinetics;

D O I：

10.1016/S0040-6090(00)01081-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium telluride thin films have been produced using the Stacked Elemental Layer technique. The films were characterized using X-ray diffraction, optical transmittance and reflectance, and atomic force microscopy. The evolution of the thin film reaction and compound formation were studied using X-ray data. The results show that the growth is diffusion controlled and the activation energy is 81.8 kJ/mol. In addition, some physical properties of the films produced are reported. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：15 / 18

页数：4

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