On the electron affinity of silicon carbide polytypes

被引：84

作者：

Davydov, S. Yu. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2007年 / 41卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063782607060152

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron affinities are calculated in the form of linear functions of the degree of hexagonality by two different methods using the concept of band offsets in heterojunctions formed by 3C-SiC in contact with a non-cubic polytype.

引用

页码：696 / 698

页数：3

共 9 条

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