On the electron affinity of silicon carbide polytypes

被引：84
|
作者：
Davydov, S. Yu. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2007年 / 41卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782607060152
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electron affinities are calculated in the form of linear functions of the degree of hexagonality by two different methods using the concept of band offsets in heterojunctions formed by 3C-SiC in contact with a non-cubic polytype.
引用
收藏
页码：696 / 698
页数：3
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