A CMOS power amplifier with an adaptive bias scheme for mobile radio frequency identification reader applications

被引：3

作者：

Han, Jeonghu ^{[1
]}

Kim, Younsuk ^{[1
]}

Park, Changkun ^{[1
]}

Lee, Dongho ^{[1
]}

Hong, Songcheol ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2007年 / 49卷 / 06期

关键词：

adaptive bias; CMOS power amplifiers; transmission-line transformer; linear power amplifiers; radio frequency identification (RFID);

D O I：

10.1002/mop.22435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 900-MHz linear power amplifier with an adaptive bias scheme is fabricated using a 0.25-mu m CMOS technology. The power amplifier operates over the range of 860-960 MHz, which is the ultrahigh-frequency band for radio frequency identification (RFID). All matching networks and RF chokes are implemented on a chip. The developed power amplifier provides a 1-dB-gain-compression point (P-1 (dB)) of 27 dBm and a power-added-efficiency (PAE) of 28% at the P-1 (dB). The adaptive bias scheme enables the power amplifier to reduce the quiescent power consumption from 280 to 80 mW by adjusting the gate voltage of power transistors as a,function of the input power. (c) 2007 Wiley Periodicals, Inc.

引用

页码：1241 / 1245

页数：5

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