GaN-based UV/blue electroluminescent devices deposited on Si at low temperature

被引：3

作者：

Aoki, Y ^{[1
]}

Hama, M ^{[1
]}

Koike, A ^{[1
]}

Tomonari, M ^{[1
]}

Honda, T ^{[1
]}

Kawanishi, H ^{[1
]}

机构：

[1] Kogakuin Univ, Dept Elect Engn, Hachioji, Tokyo 1920015, Japan

来源：

5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS | 2004年

关键词：

D O I：

10.1002/pssc.200405008

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaN layers were grown on (111)Si substrates at 450 degreesC by compound source molecular beam epitaxy (CS-MBE). Streaky reflection high-energy electron diffraction (RHEED) patterns of the GaN layers were observed after the growth. The results indicate the growth of a hexagonal GaN crystal on a Si substrate and the effectiveness of CS-MBE in the fabrication of GaN layers at low temperature. GaN-based electroluminescent devices (ELDs) using CS-MBE were fabricated on the Si substrates. Purplish blue emission was observed from the ELDs under the AC operation. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2409 / 2412

页数：4

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