A 5-GHz silicon bipolar radio transceiver front-end

被引：4

作者：

Italia, A ^{[1
]}

Ragonese, E ^{[1
]}

La Paglia, L ^{[1
]}

Palmisano, G ^{[1
]}

机构：

[1] Univ Catania, Fac Ingn, I-95125 Catania, Italy

来源：

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年

关键词：

D O I：

10.1109/BIPOL.2004.1365760

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 5-GHz radio transceiver front-end chipset, including an image-reject down-converter and a dB-Unear variable-gain up-converter, was implemented in a 46 GHz-f(T) pure silicon bipolar technology. The down-converter has a 4-dB noise figure, a 22-dB power gain and a 1-dB input compression point of -20 dBm. It also exhibits an image rejection ratio higher than 60 dB. The up-converter achieves a 1-dB output compression point of 6 dBm, a 13-dB power gain, providing a linear-in-dB gain characteristic with a dynamic range of 30 dB. The overall current consumption is 68 mA from a 3-V supply voltage.

引用

页码：120 / 123

页数：4

共 9 条

[1]

[Anonymous], 2000, 80211A1999 IEEE

[2]

[Anonymous], 80216A2003 IEEE

[3]

Behzad A, 2003, ISSCC DIG TECH PAP I, V46, P356

[4]

BOURAS I, 2003, INT SOL STAT CIRC C, P350