EFFECTS OF Cu DIFFUSION FROM ZnTe:Cu/Ti CONTACTS ON CARRIER LIFETIME OF CdS/CdTe THIN FILM SOLAR CELLS

被引：0

作者：

Gessert, T. A. ^{[1
]}

Metzger, W. K. ^{[1
]}

Asher, S. E. ^{[1
]}

Young, M. R. ^{[1
]}

Johnston, S. ^{[1
]}

Dhere, R. G. ^{[1
]}

Moriarty, T. ^{[1
]}

Duda, A. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4 | 2008年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime (tau) in the CdTe layer is affected by Cu diffusion from the contact. Time-resolved photoluminescence (TRPL) measurements show that T decreases slightly as the contacting temperature increases in the temperature regime that produces "insufficient" Cu concentration in CdTe (similar to room temperature to similar to 250 degrees C). However, T increases significantly once the contact temperature is in the range that yields "optimum" Cu concentration and high-performance devices (similar to 280 to similar to 320 degrees C). At higher substrate temperatures (>similar to 300 degrees C), T drops precipitously, consistent with a region previously identified as producing "excessive" Cu concentration - and poor device performance. The observed T increase within the "optimum temperature" range not only suggests why high-performance devices may form at these contact temperatures using many different contact processes (including paste contacts), but may provide a significant clue as to why Cu-contact formation processes impart a broad latitude in other process parameters.

引用

页码：33 / 37

页数：5

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