Systematic Approaches for Analysis and Design of Terahertz and Millimeter-Wave Integrated Circuits Using Carbon Nanotube FETs

This paper discusses design methodologies for terahertz (THz) and millimeter-wave integrated circuits using carbon nanotube field-effect transistors (CNFETs) for the first time. Two systematic approaches have been introduced throughout this paper. Pros and cons of the methods and improvements upon them are explored through both theory and simulation. The first approach is a modified g(m)/I-D technique, which is used for designing the CNFET analog integrated circuits. The characteristics of CNFETs are set using a novel ratio method in order to achieve optimal conditions. The second approach is a microwave method that is used for designing THz integrated circuits. This approach finds the optimal conditions by investigating activity conditions in order to achieve maximum accessible power gain of the device. This paper investigates CNFETs from a noise perspective and introduces promising results. Finally, a 1-THz high-power amplifier using microwave approach with a gain of 21.4 dB is presented for the first time.